NON-VOLATILE MEMORY CELL STRUCTURE AND METHOD FOR PROGRAMMING AND READING THE SAME
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United States of America Patent
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Issued Date -
Dec 13, 2012
app pub date -
Jun 9, 2011
filing date -
Jun 9, 2011
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Abandoned
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Abstract
The present invention provides a non-volatile memory cell structure. A first isolation structure is disposed on a substrate and a semiconductor layer is disposed on the first isolation structure to form a silicon on insulator device. A first doping region is made of a portion of the semiconductor layer. A gate is disposed on the first doping region. A gate oxide layer is sandwiched between the first doping region and the gate. A second doping region is disposed within the semiconductor layer and outside the first doping region. A second doping region is in direct contact with the first doping region. A second isolation structure is disposed on the first isolation structure. Further, the second isolation structure surrounds the first doping region and the second doping region. The second isolation structure is also in direct contact with the first doping region and the second doping region.
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