METHOD FOR ISOLATING RF FUNCTIONAL BLOCKS ON SILICON-ON-INSULATOR (SOI) SUBSTRATES
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United States of America Patent
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Issued Date -
Dec 13, 2012
app pub date -
Jun 7, 2012
filing date -
Jun 7, 2011
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Abandoned
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Abstract
Buried implants are used to reduce RF (radio-frequency) coupling in a SOI (Silicon-on-insulator) circuit. These buried implants are located above and/or below the BOX (buried oxide) layer of the SOI circuit. These buried implants may completely enclose the PWELL (P-type well) of an NFET (N-type Field Effect Transistor).
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