SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
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United States of America Patent
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Issued Date -
Dec 13, 2012
app pub date -
Aug 25, 2011
filing date -
Jun 9, 2011
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Abandoned
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Abstract
The present invention provides a semiconductor structure and a method for manufacturing the same. The method comprises: providing a substrate, forming sequentially a first high-k dielectric layer, an adjusting layer, a second high-k dielectric layer and a metal gate on the substrate, etching the first high-k dielectric layer, the adjusting layer, the second high-k dielectric layer and the metal gate to form a gate stack. Accordingly, the present invention further provides a semiconductor structure. The present invention proposes to arrange an adjusting layer between two layers of high-k dielectric layer, which effectively avoids reaction of the adjusting layer with the metal gate because of their direct contact, so as to maintain the performance of semiconductor devices.
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