METHOD FOR INCREASING RELIABILITY OF DATA ACCESSING FOR A MULTI-LEVEL CELL TYPE NON-VOLATILE MEMORY

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United States of America Patent

SERIAL NO

13491601

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Abstract

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The primary object of the present invention is to provide a data accessing method for a multi level cell type non-volatile memory, including a plurality of storage cells, each storage cell has 0th˜Mth bits, each Kth bit of the storage cells respectively form a Kth order bit page, wherein 0≦K≦M, the data accessing method comprising: mapping a logical page onto a plurality of physical pages when a computer system is going to access the multi-level cell type non-volatile memory; taking a plurality of temporary data storage blocks of the multi-level cell type non-volatile memory For data accessing by the computer system based on the multi-level cell type non-volatile memory; and providing a page jumper to only select the Kth order bit page of physical pages to store in one temporary data storage block.

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Patent Owner(s)

Patent OwnerAddress
ITE TECH INC3F NO 13 CHUANGSIN 1ST RD SCIENCE-BASED INDUSTRIAL PARK HSINCHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
, Lin Chanson Hsinchu County, TW 1 1

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