Process of producing a resistivity-change memory cell intended to function in a high-temperature environment
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Dec 6, 2012
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Jun 3, 2011
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Jun 3, 2011
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Abstract
A process of producing a resistivity-change memory cell is described. The process includes a deposition at room temperature, in amorphous state, of a layer of a nitrogen (N)-doped alloy of germanium (Ge) and tellurium (Te) to constitute the resistivity-change material of the memory cell. An annealing is then performed such as to limit the type of re-crystallisation by nucleation starting from the amorphous state of the phase-change material. The material used and the process permit the data retention at high temperature to be significantly improved.
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