METHOD OF BONDING SEMICONDUCTOR SUBSTRATE AND MEMS DEVICE
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United States of America Patent
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Dec 11, 2009
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Dec 11, 2009
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Abstract
A method of bonding a semiconductor substrate in which a first semiconductor substrate is bonded with a second semiconductor substrate by eutectic bonding with pressurization and heating, an aluminum containing layer primarily made of aluminum and a germanium layer in a polymer state being interposed between a bonding surface of the first semiconductor substrate and a bonding surface of the second semiconductor substrate, the method including a step of: setting a weight ratio of the germanium layer to an aluminum containing layer to be eutectic alloyed is between 27 wt % to 52 wt %.
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