Shaping a Phase Change Layer in a Phase Change Memory Cell
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United States of America Patent
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app pub date -
Jul 26, 2012
filing date -
Aug 30, 2005
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Abstract
A phase change memory cell includes a phase change layer of a phase change material on a semiconductor body. A hard mask structure is formed on the phase change layer and a resist mask is formed on the hard mask structure. A hard mask is formed by shaping the hard mask structure using the resist mask. The phase change layer is shaped using the hard mask. The resist mask is removed before shaping the phase change layer.
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