FERROELECTRIC READ HEAD
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United States of America Patent
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app pub date -
Jul 25, 2012
filing date -
Apr 6, 2007
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Abandoned
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Abstract
An apparatus can include a read head formed in a semiconductor layer of an air bearing surface, the read head comprising a channel region formed between a source and drain which are doped to a higher conductivity than the channel region; wherein the channel region is configured to generate a charge carrier depletion region in response to a first ferroelectric dipole direction, and to accumulate charge carriers in response to a second ferroelectric dipole direction.
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