Methods For Monitoring Growth Of Semiconductor Layers
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United States of America Patent
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Issued Date -
Nov 22, 2012
app pub date -
Nov 18, 2011
filing date -
Nov 22, 2010
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Abstract
Deposition of a thin film is monitored by illuminating the thin film with an incident beam during deposition of the thin film, wherein at least a portion of the incident beam reflects off the thin film to yield a reflected beam; measuring intensity of the reflected beam from the thin film during growth of the thin film to obtain reflectance; and curve-fitting at least part of an oscillation represented by the reflectance data to obtain information about at least one of thickness, growth rate, composition, and doping of the thin film.
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