Thin-Film Semiconductor Device And Display Equipped With Same

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United States of America Patent

APP PUB NO 20120292623A1
SERIAL NO

13471632

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Abstract

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The invention provides a thin-film semiconductor device, which is equipped with a gate electrode, a source electrode, a drain electrode, an oxide semiconductor film, and an oxygen release insulator film. The oxygen release insulator film is in contact with at least a part of the oxide semiconductor film.

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Patent Owner(s)

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FUTABA CORPORATIONCHIBA COUNTY JAPAN

International Classification(s)

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  • 2012 Application Filing Year
  • H01L Class
  • 20465 Applications Filed
  • 18077 Patents Issued To-Date
  • 88.34 % Issued To-Date
Click to zoom InYear of Issuance% of Matters IssuedCumulative IssuancesYearly Issuances20122013201420152016201720182019202020212022202320240255075100

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kasa, Masato Mobara-shi, JP 1 6
Obara, Yuji Mobara-shi, JP 6 25
Shiraga, Takao Morbara-shi, JP 5 13

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Patent Citation Ranking

  • 6 Citation Count
  • H01L Class
  • 3.37 % this patent is cited more than
  • 13 Age
Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges234326114937383772491639770504017801 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 8081 - 9091 - 100100 +020040060080010001200140016001800200022002400260028003000320034003600

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