Method for forming Chalcogenide Semiconductor Film and Photovoltaic Device
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United States of America Patent
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Issued Date -
Nov 8, 2012
app pub date -
Sep 16, 2011
filing date -
May 6, 2011
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Abandoned
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Abstract
A method for forming a chalcogenide semiconductor film and a photovoltaic device using the chalcogenide semiconductor film are disclosed. The method includes steps of coating a precursor solution to form a layer on a substrate and annealing the layer to form the chalcogenide semiconductor film. The precursor solution includes a solvent, metal chalcogenide nanoparticles and at least one of metal ions and metal complex ions which are distributed on surfaces of the metal chalcogenide nanoparticles. The metals of the metal chalcogenide nanoparticles, the metal ions and the metal complex ions are selected from a group consisted of group I, group II, group III and group IV elements of periodic table and include all metal elements of a chalcogenide semiconductor material.
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