METHOD FOR MANUFACTURING A SEMICONDUCTOR SUBSTRATE
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United States of America Patent
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Issued Date -
Nov 8, 2012
app pub date -
May 4, 2012
filing date -
May 10, 2011
priority date (Note) -
Abandoned
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Abstract
The invention relates to a method for manufacturing a semiconductor substrate by providing a seed support layer and a handle support layer, forming at least one semiconductor layer, in particular of a Group III/V-semiconductor material, over the seed support layer, wherein the at least one semiconductor layer is in a strained state, forming a bonding layer over the at least one semiconductor layer, forming a bonding layer over the handle support layer, and bonding the seed and handle substrates together to obtain a donor-handle compound, by direct bonding between the bonding layer of the seed substrate and the bonding layer of the handle substrate. At least one of the bonding layer of the seed substrate and the bonding layer of the handle substrate includes a silicon nitride.
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