GALLIUM NITRIDE OR OTHER GROUP III/V-BASED SCHOTTKY DIODES WITH IMPROVED OPERATING CHARACTERISTICS
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United States of America Patent
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N/A
Issued Date -
Nov 8, 2012
app pub date -
May 5, 2011
filing date -
May 5, 2011
priority date (Note) -
Abandoned
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Abstract
A semiconductor device includes a first Group III/V layer and a second Group III/V layer over the first Group III/V layer. The first and second Group III/V layers are configured to form an electron gas layer. The semiconductor device also includes a Schottky electrical contact having first and second portions. The first portion is in sidewall contact with the electron gas layer. The second portion is over the second Group III/V layer and is in electrical connection with the first portion of the Schottky electrical contact. The first portion of the Schottky electrical contact and the first or second Group III/V layer can form a Schottky barrier, and the second portion of the Schottky electrical contact can reduce an electron concentration near the Schottky barrier under reverse bias.
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