SEMICONDUCTOR SUBSTRATE AND FABRICATING METHOD THEREOF
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United States of America Patent
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Issued Date -
Nov 8, 2012
app pub date -
Oct 24, 2011
filing date -
May 6, 2011
priority date (Note) -
Abandoned
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Abstract
A fabricating method of a semiconductor substrate is provided. A patterned mask layer is formed on a substrate base. The patterned mask layer includes a plurality of apertures, and each aperture exposes a portion of the substrate base. A plurality of nano-pillars is formed on the substrate base, wherein each nano-pillar is grown on the portion of the substrate base exposed by each aperture. An insulating layer is formed on a sidewall of each nano-pillar. An epitaxial lateral overgrowth process is performed on a top portion of each nano-pillar, so as to form a semiconductor layer on the nano-pillars, wherein the semiconductor layer is exposed by a plurality of gaps disposed between the nano-pillars.
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