APPARATUS AND METHOD FOR FOCUSED ELECTRIC FIELD ENHANCED PLASMA-BASED ION IMPLANTATION

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United States of America Patent

SERIAL NO

13398500

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Abstract

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There is disclosed an apparatus and method for focused electric field enhanced plasma-based ion implantation. The apparatus includes an implantation chamber, a vacuum pump for maintaining the pressure in the implantation chamber at a desired level, a sample holder, means for applying a negative potential to the sample holder, and means for supplying a gaseous or vaporized implantation material. The supplying means takes the form of a feed conduit having an exit opening located in the implantation chamber above the sample holder, and when a negative potential is applied to the sample holder the exit opening of the feed conduit is maintained at a potential that is positive relative to the sample holder.

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Patent Owner(s)

Patent OwnerAddress
CITY UNIVERSITY OF HONG KONGTAT CHEE AVENUE KOWLOON TONG HONG KONG

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chu, Paul K Hong Kong, CN 14 457
Li, Liuhe Beijing, CN 4 5

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