METHODS FOR PRODUCING SINGLE CRYSTAL SILICON INGOTS WITH REDUCED INCIDENCE OF DISLOCATIONS
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United States of America Patent
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Issued Date -
Nov 8, 2012
app pub date -
Apr 24, 2012
filing date -
May 3, 2011
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Abandoned
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Abstract
Methods for reducing or even eliminating dislocations in Czochralski-grown silicon ingots are disclosed. Generally, the methods involve controlling the growth conditions of the neck prior to formation of the ingot body.
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