METHOD OF FABRICATING GRAPHENE-BASED FIELD EFFECT TRANSISTOR
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United States of America Patent
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Issued Date -
Nov 1, 2012
app pub date -
Jun 8, 2011
filing date -
Apr 27, 2011
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Abandoned
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Abstract
The present invention provides a method of fabricating a graphene-based field effect transistor, which includes steps of: providing a semiconductor substrate on which a non-functionized graphene layer is formed; forming a metal oxide film as a nucleation layer through a reaction between a metal source and water which acts as oxidizer and is physically absorbed to a surface of the graphene layer; and generating a HfO2 gate dielectric layer through a reaction between a hafnium source and water acting as oxidizer by using the nucealtion layer. In comparison with the prior art, the method of the present invention is mainly characterized in that the metal oxide film acting as the nucleation layer is formed through a reaction between the metal source and water which acts as oxidizer and is physically absorbed to the surface of graphene. This enables a HfO2 gate dielectric film to be prepared later on with an atomic layer deposition process to have good uniformity, a high coverage rate, and a high quality and prevents the defects which may degrade the performance of the graphene-based field effect transistor from entering the crystal lattice of graphene.
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