Method for forming a self-aligned bit line for PCRAM and self-aligned etch back process
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United States of America Patent
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May 21, 2013
Grant Date -
Nov 1, 2012
app pub date -
Jul 11, 2012
filing date -
Feb 3, 2011
priority date (Note) -
Expired
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Abstract
A method of forming bit line aligned to a phase change material that includes forming a pedestal of a sacrificial material on a portion of a lower electrode and forming at least one dielectric material adjacent to the sacrificial material, wherein the at least one dielectric material has an upper surface substantially coplanar with an upper surface of the pedestal of the sacrificial material. The pedestal of the sacrificial material is removed selective to the at least one dielectric material and the lower electrode to provide an opening to an exposed surface of the lower electrode. A phase change material is formed on the exposed surface of the lower electrode, and the opening is filled with a conductive fill material. A self-aligned etch back process is also provided.
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