Structure and Fabrication of Field-effect Transistor for Alleviating Short-channel Effects and/or Reducing Junction Capacitance
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United States of America Patent
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app pub date -
Oct 26, 2010
filing date -
Mar 31, 2000
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Abstract
An IGFET (40 or 42) has a channel zone (64 or 84) situated in body material (50). Short-channel threshold voltage roll-off and punchthrough are alleviated by arranging for the net dopant concentration in the channel zone to longitudinally reach a local surface minimum at a location between the IGFET's source/drain zones (60 and 62 or 80 and 82) and by arranging for the net dopant concentration in the body material to reach a local subsurface maximum more than 0.1 μm deep into the body material but not more than 0.1 μm deep into the body material. The source/drain zones (140 and 142 or 160 and 162) of a p-channel IGFET (120 or 122) are provided with graded-junction characteristics to reduce junction capacitance, thereby increasing switching speed.
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