DEPOSITION OF SILICON DIOXIDE ON HYDROPHOBIC SURFACES

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United States of America Patent

APP PUB NO 20120263876A1
SERIAL NO

13371923

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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Methods for forming silicon dioxide thin films on hydrophobic surfaces are provided. For example, in some embodiments, silicon dioxide films are deposited on porous, low-k materials. The silicon dioxide films can be deposited using a catalyst and a silanol. In some embodiments, an undersaturated dose of one or more of the reactants can be used in forming a pore-sealing layer over a porous material.

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ASM IP HOLDING B VVERSTERKERSTRAAT 8 ALMERE 1322 AP

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Haukka, Suvi Helsinki, FI 94 21518
Tuominen, Marko Helsinki, FI 102 10592

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