ZnO-based semiconductor device and manufacturing method thereof

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United States of America Patent

PATENT NO 8759828
APP PUB NO 20120261658A1
SERIAL NO

13445593

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Abstract

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A ZnO-based semiconductor device includes an n type ZnO-based semiconductor layer, an aluminum oxide film formed on the n type ZnO-based semiconductor layer, and a palladium layer formed on the aluminum oxide film. With this configuration, the n type ZnO-based semiconductor layer and the palladium layer form a Schottky barrier structure.

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Patent Owner(s)

Patent OwnerAddress
ROHM CO LTDKYOTO JAPAN KYOTO
TOHOKU UNIVERSITY2-1-1 KATAHIRA AOBA-KU SENDAI-SHI MIYAGI 9808577 ?9808577

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Akasaka, Shunsuke Kyoto, JP 43 101
Kawasaki, Masashi Sendai, JP 76 17468
Tsukazaki, Atsushi Sendai, JP 24 85

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