ALD OF METAL OXIDE FILM USING PRECURSOR PAIRS WITH DIFFERENT OXIDANTS
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United States of America Patent
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Issued Date -
Oct 11, 2012
app pub date -
Apr 8, 2011
filing date -
Apr 8, 2011
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Discloses is a method for depositing a thin metal oxide film on a substrate, comprising: providing a substrate (104); sequentially and alternatingly exposing a surface of said substrate to a first metal precursor and a first oxidant precursor, so as to deposit a first portion (116) of said metal oxide film (114) having a first thickness; and sequentially and alternatingly exposing the surface of the substrate to a second metal precursor and a second oxidant precursor, so as to deposit a second portion (118) of said metal oxide film (114) having a second thickness over said first portion of said metal oxide film, wherein the second oxidant precursor is ozone or oxygen plasma, while the first oxidant precursor is a milder oxidant than ozone. Also disclosed is a solar cell (100) including a metal oxide passivation film (114) deposited by said method.
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