HIGH-SELECTIVITY ETCHING SYSTEM AND METHOD
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United States of America Patent
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Issued Date -
Sep 27, 2012
app pub date -
Dec 2, 2010
filing date -
Dec 2, 2009
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Abstract
In a method and system for vapor etching, a material to be etched and an etch resistant material are placed into an etching chamber. Thereafter, a pressure in the etching chamber is adjusted to a desired pressure and the substrate is exposed to an etching gas and a gas that comprises oxygen. The exposure substantially selectively etches the material to be etched while substantially avoiding the etching of the etch resistant material.
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