LDMOS DEVICE AND METHOD FOR MAKING THE SAME
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United States of America Patent
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Issued Date -
Sep 27, 2012
app pub date -
Mar 22, 2012
filing date -
Mar 22, 2011
priority date (Note) -
Abandoned
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Abstract
The embodiments of the present disclosure disclose a LDMOS device and the method for making the LDMOS device. The LDMOS device comprises at least one capacitive region formed in the drift region. Each capacitive region comprises a polysilicon layer and a thick oxide layer separating the polysilicon layer from the drift region. The LDMOS device in accordance with the embodiments of the present disclosure can improve the breakdown voltage while a low on-resistance is maintained.
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