Methods of depositing antimony-comprising phase change material onto a substrate and methods of forming phase change memory circuitry
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United States of America Patent
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Jul 9, 2013
Grant Date -
Sep 13, 2012
app pub date -
May 23, 2012
filing date -
Apr 15, 2009
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Abstract
A method of depositing an antimony-comprising phase change material onto a substrate includes providing a reducing agent and vaporized Sb(OR)3 to a substrate, where R is alkyl, and forming there-from antimony-comprising phase change material on the substrate. The phase change material has no greater than 10 atomic percent oxygen, and includes another metal in addition to antimony.
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