Methods of manufacturing semiconductor devices and optical proximity correction
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United States of America Patent
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Nov 4, 2014
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May 24, 2012
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Dec 19, 2007
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Abstract
Methods of manufacturing semiconductor devices and methods of optical proximity correction methods are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes determining an amount of reactive ion etch (RIE) lag of a RIE process for a material layer of the semiconductor device, and adjusting a size of at least one pattern for a feature of the material layer by an adjustment amount to partially compensate for the amount of RIE lag determined.
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