METHOD FOR CONTROLLING A RESISTIVE PROPERTY IN A RESISTIVE ELEMENT USING A GAS CLUSTER ION BEAM
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United States of America Patent
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Issued Date -
Sep 6, 2012
app pub date -
Mar 3, 2011
filing date -
Mar 3, 2011
priority date (Note) -
Abandoned
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Abstract
A method for controlling a resistive property or conductive property in a resistive element using a gas cluster ion beam (GCIB) is described. In one embodiment, the method may include controlling a resistive switching behavior in a resistive switching random-access memory device using a gas cluster ion beam (GCIB).
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