MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
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United States of America Patent
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Issued Date -
Aug 30, 2012
app pub date -
Feb 28, 2012
filing date -
Feb 28, 2011
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Abstract
A manufacturing method of a semiconductor device includes: forming a metal layer having a surface containing gold; growing a first silicon nitride layer in contact with the metal layer by a plasma-enhanced vapor deposition method; growing a second silicon nitride layer in contact with the first silicon nitride layer by a plasma-enhanced vapor deposition method at a layer-forming rate higher than that of the first silicon nitride layer, the second silicon nitride layer having a silicon composition ratio smaller than that of the first silicon nitride layer.
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