METHOD OF FORMING A HYBRID SPLIT GATE SIMICONDUCTOR
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United States of America Patent
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app pub date -
Apr 30, 2012
filing date -
Oct 21, 2009
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Abandoned
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Abstract
Method of forming a Hybrid Split Gate Semiconductor. In accordance with a method embodiment of the present invention, a plurality of first trenches is formed in a semiconductor substrate to a first depth. A plurality of second trenches is formed in the semiconductor substrate to a second depth. The first plurality of trenches are parallel with the second plurality of trenches. The trenches of the plurality of first trenches alternate with and are adjacent to trenches of the plurality of second trenches.
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