METHOD OF SURFACE TREATING MICROFLUIDIC DEVICES
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United States of America Patent
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Issued Date -
Aug 30, 2012
app pub date -
Jun 18, 2010
filing date -
Jun 19, 2009
priority date (Note) -
Abandoned
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Abstract
The formation of a barrier layer within individual channels or cavities of a microfluidic device is described. The barrier layer is effected through a gas phase deposition process, desirably implemented in a plasma environment using a gas plasma reactor. Judicious selection of a precursor compound used within the gas plasma reactor can provide for generation of a layer on the individual surfaces. Desirably the surface or barrier layer is generated through the chemical adsorption of a metalloid oxide such as a silicon oxide layer on the surface of the individual channels or cavities.
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