Optoelectronic Devices Including Compound Valence-Band Quantum Well Structures

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United States of America Patent

APP PUB NO 20120217475A1
SERIAL NO

13035231

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Semiconductor optoelectronic devices based on type-II band alignments comprising a compound valence-band quantum well structure, known as an H-layer, are disclosed. The use of the H-layer structure allows simultaneous optimization of optical properties of the semiconductor structures as well as lattice matching of the various layers of the device. The use of H-layer valence-band quantum wells enables improvements to several optical device applications including semiconductor lasers, optical modulators, photon detectors and the like.

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Patent OwnerAddress
MAXION TECHNOLOGIES INC6525 BELCREST ROAD SUITE 523 HYATTSVILLE MD 20782

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Leavitt, Richard P Silver Spring, US 10 143

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  • 8 Citation Count
  • H01L Class
  • 3.37 % this patent is cited more than
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Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges234326114937383772491639770504017801 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 8081 - 9091 - 100100 +020040060080010001200140016001800200022002400260028003000320034003600

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