METHOD AND SYSTEM FOR FORMING PATTERNS USING CHARGED PARTICLE BEAM LITHOGRAPHY WITH OVERLAPPING SHOTS
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United States of America Patent
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app pub date -
Dec 18, 2011
filing date -
Feb 28, 2011
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Abandoned
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Abstract
A method and system for fracturing or mask data preparation or optical proximity correction or proximity effect correction or mask process correction is disclosed in which a set of shaped beam shots is determined that is capable of forming a pattern on a surface, where a plurality of shots in the same exposure pass overlap, and where the dose margin from the set of shots is calculated. A method for forming patterns on a surface is also disclosed.
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