High Aspect Ratio Patterning of Silicon
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United States of America Patent
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Issued Date -
Aug 23, 2012
app pub date -
Feb 16, 2012
filing date -
Feb 17, 2011
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Abstract
A silicon nanowire array including a multiplicity of silicon nanowires extending from a silicon substrate. Cross-sectional shape of the silicon nanowires and spacing between the silicon nanowires can be selected to maximize the ratio of the surface area of the silicon nanowires to the volume of the nanowire array. Methods of forming the silicon nanowire array include a nanoimprint lithography process to form a template for the silicon nanowire array and an electroless etching process to etch the template formed by the nanoimprint lithography process.
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