HYBRID SPLIT GATE SEMICONDUCTOR
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United States of America Patent
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app pub date -
Apr 30, 2012
filing date -
Oct 21, 2009
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Abandoned
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Abstract
In an embodiment in accordance with the present invention, a semiconductor device includes a vertical channel region, a gate at a first depth on a first side of the vertical channel region, a shield electrode at a second depth on the first side of the vertical channel region, and a hybrid gate at the first depth on a second side of the vertical channel region. The region below the hybrid gate on the second side of the vertical channel region is free of any electrodes.
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