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Abstract

Silicon dots are formed at a relatively low temperature, while suppressing occurrence of defects and clustering of silicon dots and damages caused by plasma, with high controllability of particle diameter and high reproducibility between substrates. Moreover, silicon dots and insulating film are formed at a relatively low temperature, with high controllability of the particle diameter of the silicon dots, high controllability of the thickness of the insulating film and high reproducibility between substrates. A method and an apparatus 1 for forming silicon dots (method and apparatus A for forming a substrate with silicon dots and insulating film) in which inductively coupled plasma is produced by an internal antenna 12 (22) with low inductance from a gas for forming silicon dots (a gas for forming insulating film); silicon dots SiD (insulating film F) are formed on a substrate S in the inductively coupled plasma; the substrate S is placed in a state that it is not exposed to unstable plasma when the plasma is in an unstable state; and the substrate S is exposed to stabilized plasma when the plasma is stabilized to start formation of the silicon dots (formation of insulating film).

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First Claim