FABRICATION AND SELECTIVE PATTERNING OF THIN FILMS USING ION BEAM-ENHANCED ATOMIC AND MOLECULAR LAYER DEPOSITION
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United States of America Patent
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Issued Date -
Aug 16, 2012
app pub date -
Aug 17, 2011
filing date -
Aug 17, 2010
priority date (Note) -
Abandoned
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Abstract
Generally, the present invention relates to patterning techniques for creating nanoscale features on a substrate. The invention offers an improved method over traditional e-beam or photolithographic techniques and uses atomic layer deposition (ALD) chemistries and a source of high-energy ions. These either as focused or a flood of ions facilitate ALD deposition by providing additional energy to the reaction or, more significantly, can form part of the final chemical structure of the ALD coating.
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