Lateral Power MOSFET With Integrated Schottky Diode
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United States of America Patent
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Issued Date -
Jun 16, 2011
app pub date -
Dec 24, 2010
filing date -
Jul 11, 2007
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Abandoned
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Abstract
A semiconductor device includes a substrate having a first region and a second region. The first region is electrically isolated from the second region. The semiconductor device further includes a lateral field-effect transistor (FET) disposed within the first region. The lateral FET includes a first terminal and a second terminal. The semiconductor device further includes a diode disposed within the second region, the diode including a plurality of anode regions and a plurality of cathode regions. The semiconductor device further includes a first electrical connection between the first terminal of the lateral FET and the anode regions of the diode, and a second electrical connection between the second terminal of the lateral FET and the cathode regions of the diode. The first and second electrical connections are disposed over a surface of the substrate.
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