Nonvolatile Memory Device Using The Resistive Switching of Graphene Oxide And The Fabrication Method Thereof
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United States of America Patent
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Issued Date -
Aug 16, 2012
app pub date -
Oct 25, 2011
filing date -
Feb 14, 2011
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Abstract
Disclosed are an oxide-based nonvolatile memory with superior resistive switching characteristics and a method for preparing the same. More particularly, the disclosure relates to a nonvolatile memory device having a metal/reduced graphene oxide (r-GO) thin film/metal structure and a method for preparing the same.
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