METHOD FOR FORMING GAPLESS SEMICONDUCTOR THIN FILM
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United States of America Patent
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app pub date -
Jan 9, 2012
filing date -
Jul 28, 2009
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Abandoned
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Abstract
Provided is a method for forming a gapless semiconductor thin film. The method includes the steps of providing a lead palladium oxide target, arranging the lead palladium oxide target in a vacuum container and providing a substrate, and forming a lead palladium oxide thin film on the substrate using the lead palladium oxide target.
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