NANOLAYER DEPOSITION USING PLASMA TREATMENT
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United States of America Patent
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app pub date -
Apr 17, 2012
filing date -
Sep 10, 2001
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Abstract
A process to deposit a thin film by chemical vapor deposition includes evacuating a chamber of gases; exposing a device to a gaseous first reactant, wherein the first reactant deposits on the device to form the thin film having a plurality of monolayers in thickness; evacuating the chamber of gases; exposing the device, coated with the first reactant, to a gaseous second reactant under a plasma treatment, wherein the thin film is treated by the first reactant; and repeating the previous steps.
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