METAL CONTACT FORMATION AND WINDOW ETCH STOP FOR PHOTOVOLTAIC DEVICES
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United States of America Patent
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Issued Date -
Aug 9, 2012
app pub date -
Feb 9, 2011
filing date -
Feb 9, 2011
priority date (Note) -
Abandoned
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Abstract
Embodiments of the invention generally relate to photovoltaic devices and more specifically, to metallic contacts disposed on photovoltaic devices and to the fabrication processes for forming such metallic contacts. In one aspect, a method for contact patterning on a photovoltaic device includes providing a semiconductor structure that includes a front contact layer and a window layer underneath the front contact layer, where the window layer also acts as an etch stop layer. At least one metal layer is deposited on the front contact layer, and a resist is applied on portions of the at least one metal layer. The at least one metal layer and the front contact layer are etched through to achieve the desired metallization.
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