DETERMINING RELATIVE SCAN VELOCITY TO CONTROL ION IMPLANTATION OF WORK PIECE

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United States of America Patent

APP PUB NO 20120196047A1
SERIAL NO

13016912

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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To select a relative velocity profile to be used in scanning an actual work piece with an ion implant beam of an ion implantation tool, the implantation of a virtual work piece is simulated. A dose distribution is calculated across the virtual work piece based on an implant beam profile and a relative velocity profile. A new relative velocity profile is then determined based on the calculated dose distribution and the relative velocity profile used in calculating the dose distribution. A new dose distribution is then calculated using the new relative velocity profile. A new relative velocity profile is determined and a corresponding new dose distribution is calculated iteratively until the new dose distribution meets one or more predetermined criteria. The new relative velocity profile is stored as the selected relative velocity profile when the new dose distribution meets the one or more predetermined criteria.

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Patent OwnerAddress
ADVANCED ION BEAM TECHNOLOGY INC5F NO 18 CREATION ROAD 1 SCIENCE PARK HSIN-CHU 300

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Shen, Cheng-Hui Hsin-Chu, TW 13 33
Wan, Zhimin Sunnyvale, US 70 308

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