METHOD AND SYSTEM FOR UTILIZING PEROVSKITE MATERIAL FOR CHARGE STORAGE AND AS A DIELECTRIC
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United States of America Patent
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Issued Date -
Aug 2, 2012
app pub date -
Mar 29, 2011
filing date -
Mar 29, 2010
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Abandoned
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Abstract
A memory device is disclosed. In a first aspect the memory comprises a first doped awell; two wells of opposite doping implanted in the first doped well; and two bitlines located on top of the two wells. The memory includes a Perovsite material on top of the first doped well and located between two bitlines; and a wordline located above the Perovskite material. In a second aspect the memory comprises a first doped well; two wells of opposite doping implanted in the first doped well; and two bitlines located on top of the two wells. The memory includes a Perovskite material located within one of the bitlines and a wordline located above the first doped well and located between the two bitlines.
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