BORON-DOPED DIAMOND SEMICONDUCTOR

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United States of America Patent

SERIAL NO

13447736

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Abstract

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First and second synthetic diamond regions are doped with boron. The second synthetic diamond region is doped with boron to a greater degree than the first synthetic diamond region, and in physical contact with the first synthetic diamond region. In a further example embodiment, the first and second synthetic diamond regions form a diamond semiconductor, such as a Schottky diode when attached to at least one metallic lead.

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Patent Owner(s)

Patent OwnerAddress
SCIO DIAMOND TECHNOLOGY CORPORATION109 THORNBLADE BOULEVARD GREER SC 29650

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Linares, Robert Sherborn, US 4 11

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