One-Die Flotox-Based Combo Non-Volatile Memory
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United States of America Patent
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Issued Date -
Jul 26, 2012
app pub date -
Jan 24, 2012
filing date -
Jan 24, 2011
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A memory access apparatus that controls access to at least one memory array has an array of programmable comparison cells that retain a programmed pass code and compare it with an access pass code. When there is a match between the access pass code and the programmed pass code, the memory access apparatus generates a match signal for allowing access to the at least one memory array. If there is no match, the data within the at least one memory array may be corrupted or destroyed. Each nonvolatile comparison cell has a pair of series connected charge retaining transistors. The programmed pass code is stored in the charge retaining transistors. Primary and complementary query pass codes are applied to the charge retaining transistors and are logically compared with the stored pass code and based on the programmed threshold voltage levels determine if the query pass code is correct.
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