Abrasive Free Silicon Chemical Mechanical Planarization
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United States of America Patent
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Issued Date -
Jul 26, 2012
app pub date -
Jan 24, 2012
filing date -
Jan 24, 2011
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Abstract
A chemical mechanical planarization method uses a chemical mechanical planarization composition that includes at least one nitrogen containing material and a pH modifying material, absent an abrasive material. The nitrogen containing material may be selected from a particular group of nitrogen containing polymers and corresponding nitrogen containing monomers. The chemical mechanical planarization method and the chemical mechanical planarization composition provide for planarizing a silicon material layer, such as but not limited to a poly-Si layer, in the presence of a silicon containing dielectric material layer, such as but not limited to a silicon oxide layer or a silicon nitride layer, with enhanced efficiency provided by an enhanced removal rate ratio.
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