PLASMA TREATMENT ON SEMICONDUCTOR WAFERS
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United States of America Patent
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Issued Date -
Jul 5, 2012
app pub date -
Dec 30, 2010
filing date -
Dec 30, 2010
priority date (Note) -
Abandoned
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Abstract
A semiconductor package and method of forming the same is described. The semiconductor package is formed from a semiconductor die cut from a semiconductor wafer that has a passivation layer. The semiconductor wafer is exposed to ionized gas causing the passivation layer to roughen. The semiconductor wafer is cut to form a plurality of semiconductor dies each with a roughened passivation layer. The plurality of semiconductor dies are placed on an adhesive layer to form a reconstituted wafer, and an encapsulation layer is formed enclosing the adhesive layer and the plurality of semiconductor dies. The passivation layer is removed and the semiconductor package formed includes electrical contacts for establishing electrical connections external to the semiconductor package.
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