METHOD FOR MANUFACTURING A SILICON NANOWIRE ARRAY USING A POROUS METAL FILM
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United States of America Patent
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Issued Date -
Jul 5, 2012
app pub date -
Sep 3, 2010
filing date -
Sep 3, 2009
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Abstract
The present invention is to provide a method for manufacturing a silicon nanowire array comprising (a) preparing a porous metal film; (b) placing the porous metal film in contact with a silicon substrate; and (c) etching the silicon substrate with a silicon etching solution. The present invention allows manufacturing vertically aligned large-area silicon nanowires by using the porous metal film as a catalyst and manufacturing nanowires having a porous structure, a porous nodular structure, an inclined structure and a zig-zag structure, which are distinguishable from nanowires of the prior art in their shape and crystallographic orientation, by adjusting etching conditions such as the composition of the silicon etching solution and the etching temperature in the step in which the silicon substrate is subjected to wet etching.
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