Importance

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Abstract

A method is described for manufacturing solar cells having a selective emitter. Wafers free of saw damage are initially provided. A doping source is then applied over the entire surface of the wafer and the dopant is initially lightly diffused into the wafer until a first layer resistance area is obtained. The applied doping source is subsequently structured, only those areas which essentially correspond to the sections on the wafer to be subsequently contacted remaining as a result of the structuring. An additional second diffusion from the remaining areas of the doping source into the wafer volume is conducted until a second layer resistance area for the selective emitter is obtained and simultaneous redistribution of the dopant introduced during the first diffusion with the goal of reducing the doping concentration in the area near the surface which is no longer covered by the doping source, provided that the layer resistance values of the first layer resistance area are greater than those of the second layer resistance area.

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First Claim