APPARATUS AND METHOD FOR MANUFACTURING POLY-SI THIN FILM
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United States of America Patent
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Issued Date -
Jun 28, 2012
app pub date -
Dec 27, 2010
filing date -
Dec 24, 2009
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Abandoned
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Abstract
An apparatus and method for fabricating a polycrystalline silicon (poly-Si) thin film are provided. The apparatus includes a chamber, a substrate stage installed at a lower portion in the chamber and on which a substrate including a conductive layer is located, a power application unit installed at an upper portion in the chamber and including an electrode terminal applying power to the conductive layer, and a conductive pad interposed between the electrode terminal and the conductive layer. Thus, it is possible to form a uniform electric field on the conductive layer, and to form a good quality of poly-Si thin film.
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